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| GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor SFH 7221 Wesentliche Merkmale * SMT-Gehause mit IR-Sender (880 nm) und Si-Fototransistor * Geeignet fur SMT-Bestuckung * Gegurtet lieferbar * Sender und Empfanger getrennt ansteuerbar * Geeignet fur IR-Reflow Loten Features * SMT package with IR emitter (880 nm) and Si-phototransistor * Suitable for SMT assembly * Available on tape and reel * Emitter und detector can be controlled separately * Suitable for IR reflow soldering Applications * Data transmission * Lock bar * Infrared interface Bestellnummer Ordering Code Q62702-P1819 Gehause Package SMT Multi TOPLED(R) Anwendungen * Datenubertragung * Wegfahrsperre * Infrarotschnittstelle Typ Type SFH 7221 2001-02-22 1 SFH 7221 Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom (LED) Forward current (LED) Kollektorstrom (Transistor) Collector current (Transistor) Stostrom Surge current t 10 s, D = 0.005 Sperrspannung (LED) Reverse voltage (LED) Kollektor-Emitter Spannung (Transistor) Collector-emitter voltage (Transistor) Verlustleistung Total power dissipation Warmewiderstand Sperrschicht / Umgebung Thermal resistance junction / ambient Montage auf PC-Board1) (Padgroe 16 mm2) mounting on pcb1) (pad size 16 mm2) Sperrschicht / Lotstelle junction / soldering joint 1) Symbol Symbol IRED Wert Value Transistor Einheit Unit Top Tstg Tj IF IC IFM - 40 ... + 100 - 40 ... + 100 C - 40 ... + 100 - 40 ... + 100 C + 100 100 - 2500 + 100 - 15 75 C mA mA mA VR VCE 5 - - 35 V V Ptot 180 165 mW Rth JA Rth JS 500 400 450 - K/W K/W PC-board: G30/FR4 Hinweis / Notes Die angegebenen Grenzdaten gelten fur einen Chip. The stated maximum ratings refer to one chip. 2001-02-22 2 SFH 7221 Kennwerte IRED (TA = 25 C) Characteristics IRED Bezeichnung Parameter Wellenlange der Strahlung Wavelength of radiation IF = 100 mA, tp = 20 ms Symbol Symbol peak 880 Wert Value Einheit Unit nm Spektrale Bandbreite bei 50% von Imax, IF = 100 mA Spectral bandwidth at 50% of Imax, IF = 100 mA Abstrahlwinkel Viewing angle Aktive Chipflache Active chip area Abmessungen der aktiven Chipflache Dimensions of active chip area Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10% Switching times, Ie from 10% to 90 % and from 90% to 10% IF = 100 mA, RL = 50 Kapazitat Capacitance VR = 0 V, f = 1 MHz Durchlaspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s Sperrstrom Reverse current VR = 5 V Gesamtstrahlungsflu Total radiant flux IF = 100 mA, tp = 20 ms Temperaturkoeffizient von Ie bzw. e Temperature coefficient of Ie bzw. e IF = 100 mA, IF = 100 mA 80 60 0.16 0.4 x 0.4 0.5 nm Grad deg. mm2 mm s A LxB LxW t r, t f Co 25 pF VF VF IR 1.5 ( 1.8) 3.0 ( 3.8) 0.01 ( 1) V V A e 23 mW TCI - 0.5 %/K 2001-02-22 3 SFH 7221 Kennwerte IRED (TA = 25 C) Characteristics IRED (cont'd) Bezeichnung Parameter Temperaturkoeffizient von VF Temperature coefficient of VF IF = 100 mA Temperaturkoeffizient von Temperature coefficient of IF = 100 mA Symbol Symbol Wert Value -2 Einheit Unit mV/K TCV TC + 0.25 nm/K Strahlstarke Ie in Achsrichtung gemessen bei einem Raumwinkel = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of = 0.01 sr Bezeichnung Parameter Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Strahlstarke Radiant intensity IF = 1 A, tp = 100 s Symbol Symbol Ie Werte Values >4 Einheit Unit mW/sr Ie typ. 48 mW/sr IRED Radiation Characteristics Irel = f () Phototransistor Directional Characteristics Srel = f () 40 30 20 10 0 OHL01660 1.0 50 0.8 0.6 60 0.4 70 0.2 80 90 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 0 2001-02-22 4 SFH 7221 Kennwerte Fototransistor (TA = 25 C, = 880 nm) Characteristics Phototransistor Bezeichnung Parameter Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax Bestrahlungsempfindliche Flache ( 240 m) Radiant sensitive area ( 240 m) Abmessung der Chipflache Dimensions of chip area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Halbwinkel Half angle Kapazitat Capacitance VCE = 0 V, f = 1 MHz, E = 0 Dunkelstrom Dark current VCE = 25 V, E = 0 Fotostrom Photocurrent Ee = 0.1 mW/cm2, VCE = 5 V Anstiegszeit/Abfallzeit Rise time/Fall time IC = 1 mA, VCC = 5 V, RL = 1 k Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage IC = 5 A, Ee = 0.1 mW/cm2 Symbol Symbol S max Wert Value 860 380 ... 1150 Einheit Unit nm nm A LxB H 0.045 0.45 x 0.45 0.5 ... 0.7 60 5.0 mm2 mm x mm mm Grad deg. pF CCE ICEO 1 ( 200) nA IPCE 16 A tr, tf 7 s VCEsat 150 mV 2001-02-22 5 SFH 7221 IRED Forward Current IF = f (VF) TA = 25 C 10 1 OHR00881 Rel Luminous Intensity IV / IV (10 mA) = f (IF), TA = 25 C 10 2 e e (100mA) 10 1 OHR00878 Perm. Pulse Handling Capability IF = f (tp), Duty cycle D = parameter, TA = 25 C 10 4 mA OHR00886 F A F 10 0 D = 0.005 0.01 0.02 0.05 10 3 0.1 0.2 0.5 10 10 -1 0 10 -1 10 2 10 -2 DC tp 10 -2 D= tp T F T 10 -3 10 -3 0 1 2 3 4 5 6 V VF 8 10 0 10 1 10 2 10 3 mA 10 4 F 10 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 s 10 2 tp Max. Permissible Forward Current IF = f (TA) 120 OHR00883 Relative Spectral Emission Irel = f () 100 rel % 80 OHR00877 F mA 100 80 R thjA = 450 K/W 60 40 60 40 20 20 0 0 20 40 60 80 100 C 120 TA 0 750 800 850 900 950 nm 1000 2001-02-22 6 SFH 7221 Phototransistor Rel. Spectral Sensitivity Srel = f () 100 S rel % 80 OHF01121 Photocurrent IPCE = f (VCE), Ee = Parameter PCE 10 0 mA OHF01529 Dark Current ICEO = f (VCE), E = 0 CEO 10 1 nA OHF01527 1 mW cm 2 mW cm 2 mW cm 2 0.5 10 0 60 10 -1 0.25 10 -1 mW 0.1 2 cm 40 10 -2 20 0 400 600 800 1000 nm 1200 10 -2 0 5 10 15 20 25 30 V 35 V CE 10 -3 0 5 10 15 20 25 30 V 35 V CE Total Power Dissipation Ptot = f (TA) 200 mW P tot 160 OHF00871 Capacitance Photocurrent IPCE/IPCE25 = f (TA), CCE = f (VCE), f = 1 MHz, E = 0 5.0 C CE pF 4.0 OHF01528 VCE = 5 V PCE 25 1.4 1.2 PCE 1.6 OHF01524 3.5 120 3.0 2.5 1.0 0.8 0.6 0.4 80 2.0 1.5 40 1.0 0.5 0.2 0 -25 0 0 20 40 60 80 C 100 TA 0 10 -2 10 -1 10 0 10 1 V 10 2 V CE 0 25 50 75 C 100 TA Dark Current ICEO = f (TA), VCE = 5 V, E = 0 CEO 10 3 nA OHF01530 Photocurrent IPCE = f (Ee), VCE = 5 V PCE 10 3 A OHF00312 10 2 10 2 10 1 10 1 10 0 10 0 10 -1 -25 0 25 50 75 C 100 TA 10 -1 10 -3 10 -2 m W/cm 2 Ee 10 0 2001-02-22 7 SFH 7221 Mazeichnung Package Outlines 3.0 (0.118) 2.6 (0.102) 2.3 (0.091) 2.1 (0.083) 0.8 (0.031) 0.6 (0.024) 2 C A 1 Package marking C E 4 3 2.1 (0.083) 1.7 (0.067) 0.9 (0.035) 0.7 (0.028) (2.4 (0.094)) 3.4 (0.134) 3.0 (0.118) 0.1 (0.004) typ 1.1 (0.043) 0.5 (0.020) 0.6 (0.024) 0.4 (0.016) 0.18 (0.007) 0.12 (0.005) GPLY6965 Mae werden wie folgt angegeben: mm (inch) / Dimensions are specified as follows: mm (inch). Published by OSRAM Opto Semiconductors GmbH & Co. OHG Wernerwerkstrasse 2, D-93049 Regensburg (c) All Rights Reserved. Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2001-02-22 8 3.7 (0.146) 3.3 (0.130) |
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